data sheet semiconductor http://www.yeashin.com 1 rev.02 20120403 MMBT5087 low noise transistor pnp silicon 2 emitter 3 collector 1 base maximum ratings rating symbol value unit collector?emitter voltage v ceo ? 50 vdc collector?base voltage v cbo ? 50 vdc emitter?base voltage v ebo ? 3.0 vdc collector current ? continuous i c ? 50 madc device marking MMBT5087=2q thermal characteristics characteristic symbol max unit total device dissipation rf-5 board (1) p d 225 mw t a =25 c derate above 25c 1.8 mw/c thermal resistance, junction to ambient r ja 556 c/w total device dissipation p d 300 mw alumina substrate, (2) t a = 25c derate above 25c 2.4 mw/c thermal resistance, junction to ambient r ja 417 c/w junction and storage temperature t j , t stg ?55 to +150 c electrical characteristics (t a = 2 5 c unless otherwise noted) characteristic symbol min max unit off characteristics collector?emitter breakdown voltage v (br)ceo ? 50 ? vdc (i c = ?1.0 madc, i b = 0) collector?base breakdown voltage v (br)cbo ? 50 ? vdc (i c = ?100 adc, i e = 0) collector cutoff current i cbo n adc (v cb = ?10 vdc, i e = 0) ? ?10 (v cb = ?35 vdc, i e = 0) ? ?50 1. fr?5 = 1.0 x 0.75 x 0.062 in. 2. alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. sot?23 (to?236ab) 1 2 3 h
http://www.yeashin.com 2 rev.02 20120403 MMBT5087 electrical characteristics electrical characteristics (t a = 25c unless otherwise noted) (continued) characteristic symbol min max unit on characteristics dc current gain h fe ?? (i c = ?100 adc, v ce = ?5.0 vdc) 250 800 (i c = ?1.0 madc, v ce = ?5.0 vdc) 250 ?? (i c = ?10 madc, v ce = ?5.0 vdc) 250 ?? collector?emitter saturation voltage v ce(sat) ?? ? 0.3 vdc (i c = ?10 madc, i b = ?1.0 madc) base?emitter saturation voltage v be(sat) ?? ? 0.85 vdc (i c = ?10 madc, i b = ?1.0 madc) small?signal characteristics current?gain ? bandwidth product f t 40 ? mhz (i c = ?500 adc, v ce = ?5.0 vdc, f = 20 mhz) output capacitance c obo ? 4.0 pf (v cb = ?5.0 vdc, i e = 0, f = 1.0 mhz) small?signal current gain h fe 250 900 ? (i c = ?1.0madc, v ce = ?5.0vdc, f = 1.0 khz) noise figure n f db (i c = ?20 madc, v ce = ?5.0 vdc,r s =10k ? , f = 1.0 khz) ? 2.0 (i c = ?100 adc, v ce = ?5.0 vdc,r s =3.0k ? , f = 1.0 khz) ? 2.0
http://www.yeashin.com 3 rev.02 20120403 MMBT5087 device characteristics noise figure is defined as: nf = 20 log 10 ( ???????????????) 1/ 2 e n = noise voltage of the transistor referred to the input. (figure 3) i n = noise current of the transistor referred to the input. (figure 4) k = boltzman?s constant (1.38 x 10 ?23 j/k) t = temperature of the source resistance (k) r s = source resistance ( ? ) e n 2 + 4ktr s + i n 2 r s 2 4ktr s typical noise characteristics (v ce = ? 5.0 vdc, t a = 25c) f, frequency (hz) figure 1. noise voltage f, frequency (hz) figure 2. noise current i c , collector current ( a) figure 3. narrow band, 100 hz i c , collector current ( a) figure 5. wideband i c , collector current ( a) figure 4. narrow band, 1.0 khz e n , noise voltage (nv) bandwidth = 1.0 hz r s 0 i c =10 a 100 a 30 a 300 a 1.0ma i n , noise current (pa) bandwidth = 1.0 hz r s i c =1.0ma 300 a 100 a 30 a bandwidth = 1.0 hz bandwidth = 1.0 hz noise figure contours (v ce = ? 5.0 vdc, t a = 25c) r s , source resistance ( ? ) r s , source resistance ( ? ) r s , source resistance ( ? ) 10 7.0 5.0 3.0 2.0 1.0 10 20 50 100 200 500 1.0k 2.0k 5.0k 10k 10 20 50 100 200 500 1.0k 2.0k 5.0k 10k 10.0 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 1.0m 500k 200k 100k 50k 20k 10k 5.0k 2.0k 1.0k 500 200 100 10 20 30 50 70 100 200 300 500 700 1.0k 10 20 30 50 70 100 200 300 500 700 1.0k 10 20 30 50 70 100 200 300 500 700 1.0k 0.5 db 1.0 db 2.0db 3.0 db 1.0db 2.0 db 3.0 db 5.0 db 0.5db 1.0db 2.0db 3.0 db 5.0 db 10 hz to 15.7khz 10 a 0.5 db 1.0m 500k 200k 100k 50k 20k 10k 5.0k 2.0k 1.0k 500 200 100 1.0m 500k 200k 100k 50k 20k 10k 5.0k 2.0k 1.0k 500 200 100 5.0 db ~ ~ ~ ~ 8
http://www.yeashin.com 4 rev.02 20120403 MMBT5087 device characteristics typical static characteristics i b , base current (ma) figure 6. collector saturation region i c , collector current (ma) figure 11. temperature coefficients v ce , collector?emitter voltage (volts) figure 7. collector characteristics i c , collector current (ma) figure 10. ?on? voltages i c , collector current (ma) v, voltage (volts) v ce , collector? emitter voltage (volts) v , temperature coefficients (mv/c) vb for v be ? vc for v ce(sat) v be(on) @ v ce = 1.0 v v ce(sat) @ i c /i b = 10 v be(sat) @ i c /i b = 10 t j =25c i c = 1.0 ma 50 ma 100 ma 10 ma t a = 25c *applies for i c / i b < h fe / 2 t a = 25c pulse width =300 s duty cycle < 2.0% a 150 a 200 a 250 a 350 a ?55c to 25c ?55c to 25c 25c to 125c 25c to 125c 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 1.6 0.8 0 ?0.8 ?1.6 ?2.4 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 1.0 0.8 0.6 0.4 0.2 0 0.002 0.0050.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 100 80 60 40 20 0 0 5.0 10 15 20 25 30 35 40 100 a 50 a 300 a
http://www.yeashin.com 5 rev.02 20120403 MMBT5087 device characteristics typical dynamic characteristics c, capacitance (pf) i c , collector current (ma) figure 10. turn?on time i c , collector current (ma) figure 11. turn?off time i c , collector current (ma) figure 12. current?gain ? bandwidth product v r , reverse voltage (volts) figure 13. capacitance t, time (ns) t, time (ns) f t , current? gain ? bandwidth product (mhz) v cc = 3.0 v i c /i b = 10 t j = 25c t d @ v be(off) = 0.5 v t r v cc = ?3.0 v i c /i b = 10 i b1 =i b2 t j = 25c t f t s t j = 25c 5.0 v c ib c ob t j = 25c 500 300 200 100 70 50 30 20 10 7.0 5.0 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 1000 700 500 300 200 100 70 50 30 20 10 ?1.0 ?2.0 ?3.0 ?5.0 ?7.0 ?10 ?20 ?30 ?50 ?70 ?100 500 300 200 100 70 50 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 10.0 7.0 5.0 3.0 2.0 1.0 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 v ce =20 v t, time (ms) figure 14. thermal response r ( t ) transient thermal resistance(normalized) d = 0.5 0.02 0.05 0.1 0.2 0.01 single pulse duty cycle, d = t 1 / t 2 d curves apply for power pulse train shown read time at t 1 (see an?569) z ja(t) = r(t) r ja t j(pk) ? t a = p (pk) z ja(t) figure 16 p (pk) t 2 t 1 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0k 2.0k 5.0k 10k 20k 50k 100k
http://www.yeashin.com 6 rev.02 20120403 MMBT5087 package outline & dimensions t j , junction temperature (c) figure 15. typical collector leakage current v cc = 30 v i c , collector current (na) 10 4 10 3 10 2 10 1 10 0 10 ?1 10 ?2 ?4 ?2 0 +20 +40 +60 +80 +100 +120 +140 +160 i cbo and i cex @ v be(off) = 3.0 v i ceo design note: use of thermal response data a train of periodical power pulses can be represented by the model as shown in figure 16. using the model and the device thermal response the normalized effective transient thermal resistance of figure 14 was calculated for various duty cycles. to find z ja(t) , multiply the value obtained from figure 14 by the steady state value r ja . example: dissipating 2.0 watts peak under the following conditions: t 1 = 1.0 ms, t 2 = 5.0 ms. (d = 0.2) using figure 16 at a pulse width of 1.0 ms and d = 0.2, the reading of r(t) is 0.22. the peak rise in junction temperature is therefore ? t = r(t) x p (pk) x r ja = 0.22 x 2.0 x 200 = 88c. for more information, see an?569.
http://www.yeashin.com 7 rev.02 20120403 MMBT5087 device characteristics notes: 1. dimensioning and tolerancing per ansi y14.5m,1982 2. controlling dimension: inch. inches millimeters dim min max min max a 0.1102 0.1197 2.80 3.04 b 0.0472 0.0551 1.20 1.40 c 0.0350 0.0440 0.89 1.11 d 0.0150 0.0200 0.37 0.50 g 0.0701 0.0807 1.78 2.04 h 0.0005 0.0040 0.013 0.100 j 0.0034 0.0070 0.085 0.177 k 0.0140 0.0285 0.35 0.69 l 0.0350 0.0401 0.89 1.02 s 0.0830 0.1039 2.10 2.64 v 0.0177 0.0236 0.45 0.60 sot - 23 d j k l a c b s h g v 12 3 mm inches 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8
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